Single Crystal Silicon Ingot

Bayani

Single Crystal Silicon Ingotis yawanci girma a matsayin babban cylindrical ingot ta daidai doping da kuma ja fasahar Czochralski CZ, Magnetic filin jawo Czochralski MCZ da kuma Floating Zone FZ hanyoyin.Hanyar CZ ita ce mafi ko'ina da ake amfani da ita don haɓakar kristal silicon na manyan ingots na cylindrical a cikin diamita har zuwa 300mm da ake amfani da su a cikin masana'antar lantarki don kera na'urorin semiconductor.Hanyar MCZ shine bambancin hanyar CZ wanda filin maganadisu ya haifar da wutar lantarki, wanda zai iya samun ƙananan ƙwayar iskar oxygen kwatankwacin, ƙananan ƙazanta na ƙazanta, ƙananan rarrabuwa da bambancin tsayayyar uniform.Hanyar FZ tana sauƙaƙe nasarar babban juriya sama da 1000 Ω-cm da kristal mai tsabta tare da ƙarancin abun ciki na oxygen.

Bayarwa

Single Crystal Silicon Ingot CZ, MCZ, FZ ko FZ NTD tare da n-type ko p-type conductivity a Western Minmetals (SC) Corporation za a iya tsĩrar da girman 50mm, 75mm, 100mm, 125mm, 150mm da 200mm diamita (2, 3). .

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Single Crystal Silicon Ingot

Single Crystal Silicon Ingot CZ, MCZ, FZ ko FZ NTDtare da n-type ko p-type conductivity a Western Minmetals (SC) Corporation za a iya tsĩrar a cikin girman 50mm, 75mm, 100mm, 125mm, 150mm da 200mm diamita (2, 3, 4, 6 da 8 inch), fuskantarwa <100 >, <110>, <111> tare da ƙasan ƙasa a cikin fakitin jakar filastik ciki tare da akwatin kwali a waje, ko azaman ƙayyadaddun ƙayyadaddun bayanai don isa cikakkiyar mafita.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Girman	2", 3", 4, 5, 6, 8, 9.5, 10, 12"
2	Diamita mm	50.8-241.3, ko kuma kamar yadda ake bukata
3	Hanyar Girma	CZ, MCZ, FZ, FZ-NTD
4	Nau'in Gudanarwa	P-type / Boron doped, N-type / Phosphide doped ko Un-doped
5	Tsawon mm	≥180 ko kuma yadda ake bukata
6	Gabatarwa	<100>, <110>, <111>
7	Resistivity Ω-cm	Kamar yadda ake bukata
8	Abubuwan da ke cikin Carbon a/cm³	≤5E16 ko kamar yadda ake bukata
9	Abun Oxygen a/cm³	≤1E18 ko kamar yadda ake bukata
10	Karfe a/cm³	<5E10 (Cu, Cr, Fe, Ni) ko <3E10 (Al, Ca, Na, K, Zn)
11	Shiryawa	Jakar filastik a ciki, akwatin plywood ko akwatin kwali a waje.

Alama	Si
Lambar Atom	14
Nauyin Atom	28.09
Kashi na Element	Metalloid
Rukuni, Lokaci, Toshe	14, 3, P
Tsarin Crystal	Diamond
Launi	Dark launin toka
Matsayin narkewa	1414°C, 1687.15 K
Wurin Tafasa	3265°C, 3538.15 K
Yawan yawa a 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Lambar CAS	7440-21-3
Lambar EC	231-130-8

Single Crystal Silicon Ingot, a lokacin da gaba daya girma da kuma cancanta da resistivity, rashin tsarki abun ciki, crystal kamala, size da nauyi, an grounded ta amfani da lu'u-lu'u ƙafafun don sanya shi cikakken Silinda zuwa dama diamita, sa'an nan jurewa wani etching tsari don cire inji lahani bar ta hanyar nika tsari. .Bayan haka an yanke ingot na cylindrical zuwa tubalan tare da takamaiman tsayi, kuma ana ba da ƙima da firamare ko na sakandare ta tsarin sarrafa wafer mai sarrafa kansa don daidaitawa don gano daidaitawar crystallographic da haɓakawa kafin aiwatar da slicing wafer.