Gallium Antimonide GaSb

Bayani

Gallium Antimonide GaSb, wani semiconductor na rukuni na III-V mahadi tare da zinc-blende lattice tsarin, an haɗa shi ta 6N 7N high tsarki gallium da antimony abubuwa, kuma girma zuwa crystal ta hanyar LEC daga daskararre polycrystalline ingot ko VGF hanya tare da EPD <1000cm^-3.GaSb wafer za a iya yanka a ciki kuma a ƙirƙira daga baya daga ingot crystalline guda ɗaya tare da babban daidaitattun sigogin lantarki, keɓaɓɓen sifofi na yau da kullun, da ƙarancin ƙarancin lahani, mafi girman ƙira fiye da sauran mahaɗan da ba ƙarfe ba.Ana iya sarrafa GaSb tare da zaɓi mai faɗi a daidai ko kashe daidaitawa, ƙarancin ƙarancin doped mai ƙarfi, ƙarancin ƙasa mai kyau da haɓakar MBE ko MOCVD epitaxial.Gallium Antimonide substrate ana amfani da shi a cikin mafi yankan-baki photo-optic da optoelectronic aikace-aikace kamar ƙirƙira na hoto ganowa, infrared ganowa tare da tsawon rai, high hankali da kuma amintacce, photoresist bangaren, infrared LEDs da Laser, transistor, thermal photovoltaic cell da tsarin thermo-photovoltaic.

Bayarwa

Gallium Antimonide GaSb a Western Minmetals (SC) Corporation za a iya bayar da tare da n-type, p-type da unndoped Semi-insulating conductivity a cikin girman 2" 3" da 4" (50mm, 75mm, 100mm) diamita, fuskantarwa <111> ko <100>, kuma tare da wafer surface gama na as-yanke, etched, goge ko high quality epitaxy shirye gama.Dukkanin yanka an yi musu rubutun Laser daban-daban don ainihi.A halin yanzu, polycrystalline gallium antimonide GaSb dunƙule kuma an keɓance shi akan buƙatar cikakken bayani.

Tambaya yanzu

Cikakkun bayanai

Tags

Ƙayyadaddun Fasaha

Gallium Antimonide

GaSb

Gallium Antimonide GaSbAna amfani da substrate a cikin mafi ƙarancin-baki photo-optic da optoelectronic aikace-aikace kamar ƙirƙira na hoto ganowa, infrared ganowa tare da tsawon rai, high ji da kuma aminci, photoresist bangaren, infrared LEDs da Laser, transistors, thermal photovoltaic cell da thermos. - tsarin photovoltaic.

	Abubuwa	Daidaitaccen Bayani
1	Girman	2"	3"	4"
2	Diamita mm	50.5 ± 0.5	76.2 ± 0.5	100± 0.5
3	Hanyar Girma	LEC	LEC	LEC
4	Gudanarwa	P-type/Zn-doped, Un-doped, N-type/Te-doped
5	Gabatarwa	(100)±0.5°, (111)±0.5°
6	Kauri μm	500± 25	600± 25	800± 25
7	Gabatarwa Flat mm	16±2	22±1	32.5 ± 1
8	Gane Flat mm	8±1	11 ± 1	18± 1
9	Motsin motsi cm2/Vs	200-3500 ko kamar yadda ake bukata
10	Matsakaicin Mai ɗaukar kaya cm-3	(1-100) E17 ko kamar yadda ake bukata
11	TTV μm max	15	15	15
12	Baka μm max	15	15	15
13	μm max	20	20	20
14	Matsakaicin Dinsity cm-2 max	500	1000	2000
15	Ƙarshen Sama	P/E, P/P	P/E, P/P	P/E, P/P
16	Shiryawa	Kwanan wafer guda ɗaya an rufe a cikin jakar Aluminum.

Tsarin layi na layi	GaSb
Nauyin Kwayoyin Halitta	191.48
Tsarin Crystal	Zinc blende
Bayyanar	Gray crystalline m
Matsayin narkewa	710°C
Wurin Tafasa	N/A
Yawan yawa a 300K	5.61 g/cm³
Tazarar Makamashi	0.726 eV
Intrinsic resistivity	1E3 Ω-cm
Lambar CAS	12064-03-8
Lambar EC	235-058-8

Gallium Antimonide GaSba Western Minmetals (SC) Corporation za a iya miƙa tare da n-type, p-type da undoped Semi-insulating conductivity a cikin girman 2" 3" da 4" (50mm, 75mm, 100mm) diamita, fuskantarwa <111> ko <100 >, kuma tare da wafer saman gama na as-yanke, etched, goge ko ingantaccen kayan kwalliyar da aka shirya.Dukkanin yanka an yi musu rubutun Laser daban-daban don ainihi.A halin yanzu, polycrystalline gallium antimonide GaSb dunƙule kuma an keɓance shi akan buƙatar cikakken bayani.