CZ Silicon Wafer

Bayani

CZ Single Crystal Silicon Wafer an yanka shi daga ingot silicon ingot guda ɗaya wanda Czochralski CZ yayi girma, wanda aka fi amfani dashi don haɓakar siliki crystal girma na manyan ingots cylindrical da ake amfani da su a cikin masana'antar lantarki don yin na'urorin semiconductor.A cikin wannan tsari, ana shigar da siriri siliki na siliki mai madaidaicin juriya a cikin narkakkar wanka na siliki wanda zafinsa ke sarrafa shi daidai.Ana ciro kiristocin iri a hankali zuwa sama daga narke a cikin ƙimar sarrafawa sosai, haɓakar kristal na atom daga wani lokaci na ruwa yana faruwa a wurin dubawa, kristal iri da crucible suna jujjuya su a wasu wurare daban-daban yayin wannan tsarin cirewa, ƙirƙirar babban guda ɗaya. crystal silicon tare da iri ta cikakken tsarin crystalline.

Godiya ga filin maganadisu da aka yi amfani da madaidaicin CZ ingot ja, Magnetic-filin-induced Czochralski MCZ silicon crystal siliki guda ɗaya yana da ƙarancin ƙarancin ƙazanta, ƙananan matakin oxygen da ɓarna, da bambancin juriya na uniform wanda ke aiki sosai a cikin manyan kayan lantarki da na'urori. ƙirƙira a cikin lantarki ko masana'antu na hotovoltaic.

Bayarwa

CZ ko MCZ Single Crystal Silicon Wafer n-type da p-type conductivity at Western Minmetals (SC) Corporation za a iya isar da su a girman 2, 3, 4, 6, 8 da 12 inch diamita (50, 75, 100, 125, 150, 200 da 300mm), fuskantarwa <100>, <110>, <111> tare da saman gama na lapped, etched da goge a cikin kunshin akwatin kumfa ko kaset tare da akwatin kwali a waje.

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CZ Silicon Wafer

CZ Single Crystal Silicon Wafer shi ne ainihin abu a cikin samar da hadedde da'irori, diodes, transistor, discrete aka gyara, amfani da kowane irin lantarki kayan aiki da semiconductor na'urorin, kazalika da substrate a epitaxial aiki, SOI wafer substrate ko Semi-insulating fili wafer ƙirƙira, musamman manyan. diamita na 200mm, 250mm da 300mm ne mafi kyau duka don kera ultra sosai hadedde na'urorin.Single Crystal Silicon kuma ana amfani dashi don ƙwayoyin hasken rana a cikin adadi mai yawa ta hanyar masana'antar hoto, wanda kusan cikakkiyar tsarin kristal yana haifar da mafi girman canjin haske-zuwa wutar lantarki.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Girman	2"	3"	4"	6"	8"	12"
2	Diamita mm	50.8 ± 0.3	76.2 ± 0.3	100± 0.5	150± 0.5	200± 0.5	300± 0.5
3	Gudanarwa	P ko N ko un-doped
4	Gabatarwa	<100>, <110>, <111>
5	Kauri μm	279, 381, 425, 525, 575, 625, 675, 725 ko kuma yadda ake bukata
6	Resistivity Ω-cm	≤0.005, 0.005-1, 1-10, 10-20, 20-100, 100-300 da dai sauransu
7	Farashin RRV	8%, 10%, 12%
8	Fitowa na Farko / Tsawon mm	A matsayin mizanin SEMI ko yadda ake buƙata
9	Na biyu Lebur/ Tsawon mm	A matsayin mizanin SEMI ko yadda ake buƙata
10	TTV μm max	10	10	10	10	10	10
11	Bow & Warp μm max	30	30	30	30	30	30
12	Ƙarshen Sama	Kamar yadda aka yanke, L/L, P/E, P/P
13	Shiryawa	Akwatin kumfa ko kaset a ciki, akwatin kwali a waje.

Alama	Si
Lambar Atom	14
Nauyin Atom	28.09
Kashi na Element	Metalloid
Rukuni, Lokaci, Toshe	14, 3, P
Tsarin Crystal	Diamond
Launi	Dark launin toka
Matsayin narkewa	1414°C, 1687.15 K
Wurin Tafasa	3265°C, 3538.15 K
Yawan yawa a 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Lambar CAS	7440-21-3
Lambar EC	231-130-8

CZ ko MCZ Single Crystal Silicon Wafern-type da p-type conductivity a Western Minmetals (SC) Corporation za a iya isar da su a cikin girman 2, 3, 4, 6, 8 da 12 inch diamita (50, 75, 100, 125, 150, 200 da 300mm), daidaitawa <100>, <110>, <111> tare da kammala saman kamar-yanke, lapped, etched da goge a cikin kunshin akwatin kumfa ko kaset tare da akwatin kwali a waje.