Gallium oxide

Bayani

Gallium oxide Ga₂O₃99.99%, 99.999% da 99.9999% 4N 5N 6N, wani farin m foda a duka α da β crystal matakai, CAS 12024-21-4, kwayoyin nauyi 187.44, narkewa batu 1740 ° C, insoluble a cikin ruwa mai yawa amma soluble. wani abu ne na zahirin oxide semiconductor abu tare da kyawawan kaddarorin babban babban rata na bandeji fiye da 4.9eV, da wadatar manya-manya, ingantattun sinadarai na asali waɗanda aka samar daga manyan lu'ulu'u masu girma na narke.Gallium oxide Ga₂O₃yana da fa'ida mai fa'ida don aikace-aikace a cikin masana'antar optoelectronic kamar rufin insulating don kayan semiconductor na tushen Ga, azaman matattarar ultraviolet, azaman binciken sinadarai don iskar oxygen, shingen rufewa don haɗin kai, na'urorin semiconductor na gani da aikace-aikacen yumbu.Gallium oxide kuma ana amfani dashi don a cikin haske emitting diodes LEDs mai kyalli foda, high tsarki reagent, kazalika a cikin Laser da sauran luminescent kayan da dai sauransu.

Bayarwa

Gallium oxide ko Gallium Trioxide Ga₂O₃ a cikin α ko β nau'in crystallographic nau'i tare da tsarki na 99.99%, 99.999% da 99.9999% (4N 5N 6N) a Western Minmetals (SC) Corporation za a iya tsĩrar da girman foda D50 ≤ 4.0micron ， -80mesh （1micron） 50-100 raga (0.15-0.30micron) a cikin kunshin 1kg, 2kg a cikin kwalban polyethylene, ko 1kg, 2kg, 5kg a cikin jakar kayan kwalliyar aluminium tare da akwatin kwali a waje na 10kg ko 20kg net kowanne, ko kuma daidaitattun ƙayyadaddun mafita. .

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Ga₂O₃

Bayyanar	Farin crystal
Nauyin Kwayoyin Halitta	187.44
Yawan yawa	-
Matsayin narkewa	1740 ° C
CAS No.	12024-21-4

A'a.	Abu		Daidaitaccen Bayani
1	TsaftaGa₂O₃≥		Rashin tsarki(ICP-MS PPM Max kowane)
2	4N	99.99%	Mg/Ni/Mn 3.0, Cr/Ca/Co/Cd/Cu/Sn 5.0, Pb 8.0, Na/Fe/Al 10	Jimlar ≤100
	5N	99.999%	Mg/Ni/Mn 0.1, Cr/ Ca/Cu/Cd/Cu/Sn 0.5, Na/Al/Fe 1.0, Pb 1.5	Jimlar ≤10
	6N	99.9999%	Mn/Ca/Co/Cd 0.05, Pb/Al/Fe/Cu/Sn 0.1	Jimlar ≤1.0
3	Crystallographic Form		α ko nau'in β
4	Girman		D₅₀≤ 4um, -80 raga ko 50-100 raga foda
5	Shiryawa		1kg, 2kg a cikin kwalban filastik, ko 1kg, 2kg, 5kg a cikin jakar haɗin aluminum tare da akwatin kwali a waje

Gallium oxide Ga₂O₃ya da Gallium Trioxide Ga₂O₃a cikin α ko β nau'in crystallographic nau'i tare da tsarki na 99.99%, 99.999% da 99.9999% (4N 5N 6N) a Western Minmetals (SC) Corporation za a iya tsĩrar da girman foda D50 ≤ 4.0micron ， -80mesh （1micron） 50-100 raga (0.15-0.30micron) a cikin kunshin 1kg, 2kg a cikin kwalban polyethylene, ko 1kg, 2kg, 5kg a cikin jakar kayan kwalliyar aluminium tare da akwatin kwali a waje, ko azaman ƙayyadaddun ƙayyadaddun bayanai zuwa cikakkiyar mafita.

Gallium oxide Ga₂O₃ko Gallium Trioxide yana da fa'ida mai fa'ida don aikace-aikace a cikin masana'antar optoelectronic kamar insulating Layer don kayan semiconductor na tushen Ga, azaman matattarar ultraviolet, azaman binciken sinadarai don iskar oxygen, shingen rufewa don haɗin kai, na'urorin semiconductor na gani da aikace-aikacen yumbu.Gallium oxide kuma ana amfani dashi don a cikin haske emitting diodes LEDs mai kyalli foda, high tsarki reagent, kazalika a cikin Laser da sauran luminescent kayan da dai sauransu.