Epitaxial (EPI) Silicon Wafer

Bayani

Epitaxial Silicon Waferko EPI Silicon Wafer, wafer ne na Layer na kristal semiconducting wanda aka ajiye akan fuskar lu'ulu'u mai gogewa na siliki ta haɓakar epitaxial.Layer na epitaxial na iya zama abu ɗaya da na substrate ta haɓakar epitaxial mai kama da juna, ko wani nau'i mai ban sha'awa tare da ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ci gaban epitaxial, wanda ke ɗaukar fasahar haɓakar epitaxial ya haɗa da sinadarai na tururi jijiya CVD, ruwa lokaci epitaxy LPE, kazalika da kwayoyin katako. Epitaxy MBE don cimma mafi girman ingancin ƙarancin ƙarancin lahani da ƙaƙƙarfan yanayi mai kyau.Silicon Epitaxial Wafers ana amfani da su da farko wajen samar da na'urori na ci gaba na semiconductor, abubuwan haɗin gwiwar semiconductor ICs, masu hankali da na'urorin wuta, kuma ana amfani da su don kashi na diode da transistor ko substrate don IC kamar nau'in bipolar, MOS da na'urorin BiCMOS.Bugu da ƙari, mahara Layer epitaxial da kauri fim EPI silicon wafers yawanci amfani da microelectronics, photonics da photovoltaics aikace-aikace.

Bayarwa

Epitaxial Silicon Wafers ko EPI Silicon Wafer a Western Minmetals (SC) Corporation za a iya miƙa a cikin girman 4, 5 da 6 inch (100mm, 125mm, 150mm diamita), tare da fuskantarwa <100>, <111>, epilayer resistivity na <1ohm -cm ko har zuwa 150ohm-cm, da epilayer kauri na <1um ko har zuwa 150um, don gamsar da daban-daban bukatun a surface gama na etched ko LTO jiyya, cushe a cikin kaset tare da kwali akwatin waje, ko kamar yadda musamman takamaiman bayani ga cikakken bayani. .

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Epi Silicon Wafer

Epitaxial Silicon Wafersko EPI Silicon Wafer a Western Minmetals (SC) Corporation za a iya miƙa a cikin girman 4, 5 da 6 inch (100mm, 125mm, 150mm diamita), tare da fuskantarwa <100>, <111>, epilayer resistivity na <1ohm-cm ko har zuwa 150ohm-cm, kuma epilayer kauri na <1um ko har zuwa 150um, don gamsar da daban-daban bukatun a surface gama na etched ko LTO jiyya, cushe a cikin kaset tare da kwali akwatin waje, ko kamar yadda musamman takamaiman bayani ga cikakken bayani.

Alama	Si
Lambar Atom	14
Nauyin Atom	28.09
Kashi na Element	Metalloid
Rukuni, Lokaci, Toshe	14, 3, P
Tsarin Crystal	Diamond
Launi	Dark launin toka
Matsayin narkewa	1414°C, 1687.15 K
Wurin Tafasa	3265°C, 3538.15 K
Yawan yawa a 300K	2.329 g/cm³
Intrinsic resistivity	3.2E5 Ω-cm
Lambar CAS	7440-21-3
Lambar EC	231-130-8

A'a.	Abubuwa	Daidaitaccen Bayani
1	Halayen Gabaɗaya
1-1	Girman	4"	5"	6"
1-2	Diamita mm	100± 0.5	125± 0.5	150± 0.5
1-3	Gabatarwa	<100>, <111>	<100>, <111>	<100>, <111>
2	Halayen Layer na Epitaxial
2-1	Hanyar Girma	CVD	CVD	CVD
2-2	Nau'in Gudanarwa	P ko P+, N/ ko N+	P ko P+, N/ ko N+	P ko P+, N/ ko N+
2-3	Kauri μm	2.5-120	2.5-120	2.5-120
2-4	Kauri Uniformity	≤3%	≤3%	≤3%
2-5	Resistivity Ω-cm	0.1-50	0.1-50	0.1-50
2-6	Uniformity Resistivity	≤3%	≤5%	-
2-7	Ragewar cm-2	<10	<10	<10
2-8	ingancin saman	Babu guntu, hazo ko bawon lemu da ya rage, da sauransu.
3	Hannun Halayen Substrate
3-1	Hanyar Girma	CZ	CZ	CZ
3-2	Nau'in Gudanarwa	P/N	P/N	P/N
3-3	Kauri μm	525-675	525-675	525-675
3-4	Kauri Uniformity max	3%	3%	3%
3-5	Resistivity Ω-cm	Kamar yadda ake bukata	Kamar yadda ake bukata	Kamar yadda ake bukata
3-6	Uniformity Resistivity	5%	5%	5%
3-7	TTV μm max	10	10	10
3-8	Baka μm max	30	30	30
3-9	μm max	30	30	30
3-10	EPD cm-2 max	100	100	100
3-11	Bayanan Bayani	Zagaye	Zagaye	Zagaye
3-12	ingancin saman	Babu guntu, hazo ko bawon lemu da ya rage, da sauransu.
3-13	Ƙare Gefen Baya	Etched ko LTO (5000± 500Å)
4	Shiryawa	Kaset a ciki, akwatin kwali a waje.

Silicon Epitaxial Wafersana amfani da su da farko wajen samar da na'urori na ci gaba na semiconductor, abubuwan haɗin gwiwar semiconductor ICs, na'urori masu hankali da wutar lantarki, kuma ana amfani da su don kashi na diode da transistor ko substrate don IC kamar nau'in bipolar, MOS da na'urorin BiCMOS.Bugu da ƙari, mahara Layer epitaxial da kauri fim EPI silicon wafers yawanci amfani da microelectronics, photonics da photovoltaics aikace-aikace.