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Indium Arsenide InAs

Bayani

Indium arsenide InAs crystal wani fili ne na rukunin III-V wanda aka haɗa ta aƙalla 6N 7N tsarkakakken Indium da arsenic da girma crystal ta VGF ko Liquid Encapsulated Czochralski (LEC), bayyanar launin toka, lu'ulu'u masu siffar sukari tare da tsarin zinc-blende , wurin narkewa na 942 °C.Indium arsenide gap ɗin band ɗin shine canjin kai tsaye daidai da gallium arsenide, kuma faɗin band ɗin da aka haramta shine 0.45eV (300K).InAs crystal yana da babban daidaituwa na sigogi na lantarki, lattice akai-akai, babban motsi na lantarki da ƙarancin ƙarancin lahani.Za'a iya yanka lu'ulu'u na InAs na Silinda wanda VGF ko LEC ke girma kuma a ƙirƙira shi cikin wafer kamar yadda-yanke, gyaggyarawa, goge ko shirya don ci gaban MBE ko MOCVD epitaxial.

Aikace-aikace

Indium arsenide crystal wafer babban abu ne don kera na'urorin Hall da firikwensin filin maganadisu don babban motsin zauren sa amma kunkuntar bandgap makamashi, ingantaccen abu don gina injin gano infrared tare da kewayon tsayin 1-3.8 µm da aka yi amfani da shi a aikace-aikace masu ƙarfi. a zafin jiki, kazalika da tsakiyar zangon infrared super lattice lasers, tsakiyar infrared LEDs na'urorin ƙirƙira don kewayon tsayinsa na 2-14 μm.Bugu da ƙari, InAs shine madaidaicin madauri don ƙara tallafawa InGaAs iri-iri, InAsSb, InAsPSb & InNAsSb ko AlGaSb super lattice tsarin da sauransu.

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Indium Arsenide

InAs

Indium Arsenide

Indium Arsenide Crystal Waferbabban abu ne don yin na'urori na Hall da firikwensin filin maganadisu don motsin dakinsa mafi girma amma kunkuntar bandgap makamashi, ingantaccen abu don gina injin gano infrared tare da kewayon tsayin 1-3.8 µm da aka yi amfani da shi a aikace-aikace masu ƙarfi a cikin zafin jiki, haka kuma tsakiyar zangon infrared super lattice lasers, ƙirar na'urorin LEDs na tsakiyar infrared don kewayon tsayinsa na 2-14 μm.Bugu da ƙari, InAs shine madaidaicin madauri don ƙara tallafawa InGaAs iri-iri, InAsSb, InAsPSb & InNAsSb ko AlGaSb super lattice tsarin da sauransu.

A'a. Abubuwa Daidaitaccen Bayani
1 Girman 2" 3" 4"
2 Diamita mm 50.5 ± 0.5 76.2 ± 0.5 100± 0.5
3 Hanyar Girma LEC LEC LEC
4 Gudanarwa P-type/Zn-doped, N-type/S-doped, Un-doped
5 Gabatarwa (100)±0.5°, (111)±0.5°
6 Kauri μm 500± 25 600± 25 800± 25
7 Gabatarwa Flat mm 16±2 22± 2 32± 2
8 Gane Flat mm 8±1 11 ± 1 18± 1
9 Motsin motsi cm2/Vs 60-300, ≥2000 ko kamar yadda ake bukata
10 Matsakaicin Mai ɗaukar kaya cm-3 (3-80) E17 ko ≤5E16
11 TTV μm max 10 10 10
12 Baka μm max 10 10 10
13 μm max 15 15 15
14 Matsakaicin Dinsity cm-2 max 1000 2000 5000
15 Ƙarshen Sama P/E, P/P P/E, P/P P/E, P/P
16 Shiryawa Kwanan wafer guda ɗaya an rufe a cikin jakar Aluminum.
Tsarin layi na layi InAs
Nauyin Kwayoyin Halitta 189.74
Tsarin Crystal Zinc blende
Bayyanar Gray crystalline m
Matsayin narkewa (936-942)°C
Wurin Tafasa N/A
Yawan yawa a 300K 5.67 g/cm3
Tazarar Makamashi 0.354v
Resistivity na ciki 0.16 Ω-cm
Lambar CAS 1303-11-3
Lambar EC 215-115-3

 

Indium Arsenide InAsa Western Minmetals (SC) Corporation za a iya kawota a matsayin polycrystalline dunƙule ko guda crystal as-cut, etched, goge, ko epi-shirye wafers a cikin girman 2" 3" da 4" (50mm, 75mm,100mm) diamita, da kuma p-type, n-type ko un-doped conductivity da <111> ko <100> daidaitawa.Ƙimar ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun shine don cikakkiyar bayani ga abokan cinikinmu a duk duniya.

InAs-W

InAs-W2

w3

PK-17 (2)

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Indium Arsenide Wafer


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