Gallium Phosphide GaP

Bayani

Gallium Phosphide GaP, wani muhimmin semiconductor na musamman lantarki Properties kamar sauran III-V fili kayan, crystallizes a cikin thermodynamically barga mai siffar sukari ZB tsarin, wani orange-rawaya semitransparent crystal abu tare da kai tsaye band rata na 2.26 eV (300K), wanda yake shi ne. haɗe daga 6N 7N high tsarki gallium da phosphorus, kuma girma zuwa guda crystal ta Liquid Encapsulated Czochralski (LEC) dabara.Gallium Phosphide crystal ne doped sulfur ko tellurium don samun n-type semiconductor, kuma zinc doped azaman p-type conductivity don ƙarin ƙirƙira cikin wafern da ake so, wanda ke da aikace-aikace a cikin tsarin gani, lantarki da sauran na'urorin optoelectronics.Single Crystal GaP wafer za a iya shirya Epi-Shirye don LPE, MOCVD da aikace-aikacen epitaxial na MBE.High quality guda crystal Gallium phosphide GaP wafer p-type, n-type ko undoped conductivity a Western Minmetals (SC) Corporation za a iya miƙa a cikin girman 2 "da 3" (50mm, 75mm diamita), fuskantarwa <100>, <111 > tare da gamawar shimfidar wuri na as-yanke, goge-goge ko tsarin shirye-shirye.

Aikace-aikace

Tare da ƙarancin halin yanzu da babban inganci a cikin fitarwa mai haske, Gallium phosphide GaP wafer ya dace da tsarin nunin gani kamar ja, orange, da koren haske-emitting diodes (LEDs) da hasken baya na rawaya da koren LCD da sauransu da kuma kwakwalwan kwamfuta na LED masana'anta tare da ƙananan haske zuwa matsakaiciyar haske, GaP kuma ana ɗaukarsa ko'ina azaman tushen tushen infrared na'urori masu auna firikwensin da kera kyamarori.

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Gallium Phosphide GaP

High quality guda crystal Gallium Phosphide GaP wafer ko substrate p-type, n-type ko undoped conductivity a Western Minmetals (SC) Corporation za a iya miƙa a cikin girman 2 "da 3" (50mm, 75mm) a diamita, fuskantarwa <100> , <111> tare da saman gama na as-yanke, lapped, etched, goge, epi-shirye sarrafa a cikin guda wafer ganga shãfe haske a cikin aluminum composite jakar ko kamar yadda musamman takamaiman bayani ga cikakken bayani.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Girman GaP	2"
2	Diamita mm	50.8 ± 0.5
3	Hanyar Girma	LEC
4	Nau'in Gudanarwa	Nau'in P-nau'in /Zn-doped, nau'in N-nau'i/(S, Si, Te) -doped, Un-doped
5	Gabatarwa	<1 1 1> ± 0.5°
6	Kauri μm	(300-400) ± 20
7	Resistivity Ω-cm	0.003-0.3
8	Hannun Flat (OF) mm	16± 1
9	Flat Ganewa (IF) mm	8±1
10	Motsi na Hall cm2/Vs min	100
11	Matsakaicin Mai ɗaukar kaya cm^-3	(2-20) E17
12	Matsakaicin Dinsity cm^-2max	2.00E+05
13	Ƙarshen Sama	P/E, P/P
14	Shiryawa	Ganyen wafer guda ɗaya an rufe shi a cikin jakar haɗin aluminum, akwatin kwali a waje

Tsarin layi na layi	GaP
Nauyin Kwayoyin Halitta	100.7
Tsarin Crystal	Zinc blende
Fuskanci	Orange mai ƙarfi
Matsayin narkewa	N/A
Wurin Tafasa	N/A
Yawan yawa a 300K	4.14 g/cm³
Tazarar Makamashi	2.26v
Intrinsic resistivity	N/A
Lambar CAS	12063-98-8
Lambar EC	235-057-2

Gallium Phosphide GaP Wafer, tare da low halin yanzu da high dace a cikin haske emitting, ya dace da tsarin nuni na gani kamar ƙananan farashi ja, orange, da koren haske-emitting diodes (LEDs) da kuma hasken baya na rawaya da kore LCD da dai sauransu da kuma kwakwalwan kwamfuta na LED masana'antu tare da ƙananan zuwa matsakaici. haske, GaP kuma ana karɓar ko'ina a matsayin tushen tushen infrared na'urori masu auna firikwensin da kera kyamarori.