Farashin Silicon Carbide

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Silicon Carbide Wafer SiC, yana da wuyar gaske, sintetically samar da kristal na silicon da carbon ta hanyar MOCVD, kuma yana nunawa.na musamman fadi da rata da sauran m halaye na low coefficient na thermal fadada, mafi girma aiki zafin jiki, mai kyau zafi dissipation, ƙananan sauyawa da tafiyarwa asarar, mafi makamashi m, high thermal watsin da kuma karfi da wutar lantarki rushewar filin, kazalika da mafi mayar da hankali igiyoyin. yanayi.Silicon Carbide SiC a Western Minmetals (SC) Corporation za a iya bayar da shi a cikin girman 2" 3' 4" da 6" (50mm, 75mm, 100mm, 150mm) diamita, tare da n-type, Semi-insulating ko dummy wafer don masana'antu da aikace-aikacen dakin gwaje-gwaje.Duk wani ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun bayani ga abokan cinikinmu a duk duniya.

Aikace-aikace

Babban ingancin 4H / 6H Silicon Carbide SiC wafer shine cikakke ga masana'anta da yawa yankan-baki mafi sauri, high-zazzabi & high-voltage na'urorin lantarki kamar Schottky diodes & SBD, high-ikon sauya MOSFETs & JFETs, da dai sauransu Yana da. Hakanan abu ne mai kyawawa a cikin bincike & haɓaka transistors-ƙofa bipolar transistor da thyristors.A matsayin fitaccen sabon ƙarni na semiconducting abu, Silicon Carbide SiC wafer kuma yana aiki azaman ingantaccen mai watsa zafi a cikin manyan abubuwan LEDs, ko kuma a matsayin tsayayye kuma sanannen yanki don haɓaka Layer GaN don goyon bayan binciken kimiyya da aka yi niyya a nan gaba.

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Farashin Silicon Carbide

Farashin Silicon Carbidea Western Minmetals (SC) Corporation za a iya bayar da a cikin girman 2" 3' 4" da 6" (50mm, 75mm, 100mm, 150mm) diamita, tare da n-type, Semi-insulating ko dummy wafer don masana'antu da aikace-aikace na dakin gwaje-gwaje. .Duk wani ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun bayani ga abokan cinikinmu a duk duniya.

Tsarin layi na layi	SiC
Nauyin Kwayoyin Halitta	40.1
Tsarin Crystal	Wurtzite
Bayyanar	M
Matsayin narkewa	3103± 40K
Wurin Tafasa	N/A
Yawan yawa a 300K	3.21 g/cm³
Tazarar Makamashi	(3.00-3.23) eV
Intrinsic resistivity	> 1E5 Ω-cm
Lambar CAS	409-21-2
Lambar EC	206-991-8

A'a.	Abubuwa	Daidaitaccen Bayani
1	Girman SiC	2"	3"	4"	6"
2	Diamita mm	50.8 0.38	76.2 0.38	1000.5	1500.5
3	Hanyar Girma	MOCVD	MOCVD	MOCVD	MOCVD
4	Nau'in Gudanarwa	4H-N, 6H-N, 4H-SI, 6H-SI
5	Resistivity Ω-cm	0.015-0.028;0.02-0.1;> 1 E5
6	Gabatarwa	0°±0.5°;4.0° zuwa <1120>
7	Kauri μm	330± 25	330± 25	(350-500) ± 25	(350-500) ± 25
8	Wuri na Farko	<1-100>±5°	<1-100>±5°	<1-100>±5°	<1-100>±5°
9	Tsawon Fitowa na Farko mm	16 ± 1.7	22.2 ± 3.2	32.5 ± 2	47.5 ± 2.5
10	Wuri Mai Wuta na Sakandare	Fuskar Silicon: 90°, agogon agogo daga firam ɗin lebur ± 5.0°
11	Tsawon Flat na biyu mm	8 ± 1.7	11.2 ± 1.5	18±2	22± 2.5
12	TTV μm max	15	15	15	15
13	Baka μm max	40	40	40	40
14	μm max	60	60	60	60
15	Ƙimar Ƙarfi mm max	1	2	3	3
16	Girman Micropipe cm-2	<5, masana'antu;<15, lab;<50, dam
17	Ragewar cm-2	<3000, masana'antu;<20000, lab;<500000, Babba
18	Surface Roughness nm max	1 (Gold), 0.5 (CMP)
19	Karas	Babu, don darajar masana'antu
20	Faranti hexagonal	Babu, don darajar masana'antu
21	Scratches	≤3mm, jimlar tsawon kasa da diamita na substrate
22	Kwakwalwa na Edge	Babu, don darajar masana'antu
23	Shiryawa	Kwanan wafer guda ɗaya an rufe shi a cikin jakar haɗin aluminum.

Silicon Carbide SiC 4H/6Hhigh quality wafer ne cikakke ga masana'antu da yawa yankan-baki m sauri, high-zazzabi & high-voltage lantarki na'urorin kamar Schottky diodes & SBD, high-ikon sauyawa MOSFETs & JFETs, da dai sauransu Har ila yau, yana da kyawawa abu a cikin bincike & ci gaban insulated-gate bipolar transistors da thyristors.A matsayin fitaccen sabon ƙarni na semiconducting abu, Silicon Carbide SiC wafer kuma yana aiki azaman ingantaccen mai watsa zafi a cikin manyan abubuwan LEDs, ko kuma a matsayin tsayayye kuma sanannen yanki don haɓaka Layer GaN don goyon bayan binciken kimiyya da aka yi niyya a nan gaba.