Indium Phosphide InP

Bayani

Indium Phosphide InP,CAS No.22398-80-7, ma'anar narkewa 1600 ° C, wani nau'i na nau'i na nau'i na nau'i na nau'i na nau'i-nau'i na iyali na III-V, wani tsari mai siffar siffar cubic "zinc blende" mai siffar fuska, wanda yake kama da mafi yawan nau'in semiconductor na III-V, an haɗa shi daga 6N 7N high tsarki indium da phosphorus element, kuma girma zuwa guda crystal ta hanyar LEC ko VGF dabara.Indium Phosphide crystal an doped don zama n-type, p-type ko Semi-insulating conductivity don ƙarin ƙirƙira wafer har zuwa diamita 6 ″ (150 mm), wanda ke fasalta tazarar band ɗin ta kai tsaye, babban motsi na electrons da ramuka da ingantaccen thermal. rashin daidaituwa.Indium Phosphide InP Wafer prime ko gwajin sa a Western Minmetals (SC) Corporation za a iya miƙa tare da p-type, n-type da Semi-insulating conductivity a cikin girman 2" 3" 4" da 6" (har zuwa 150mm) diamita, fuskantarwa <111> ko <100> da kauri 350-625um tare da saman gama na etched da goge ko Epi-shirye tsari.A halin yanzu Indium Phosphide Single Crystal ingot 2-6 ″ yana samuwa akan buƙata.Polycrystalline Indium Phosphide InP ko Multi-crystal InP ingot a girman D(60-75) x Tsawon (180-400) mm na 2.5-6.0kg tare da maida hankali mai ɗaukar nauyi na ƙasa da 6E15 ko 6E15-3E16 shima akwai.Duk wani ƙayyadaddun ƙayyadaddun ƙayyadaddun da ake samu akan buƙata don cimma cikakkiyar mafita.

Aikace-aikace

Indium Phosphide InP wafer ana amfani dashi ko'ina don kera kayan haɗin optoelectronic, babban iko da na'urorin lantarki masu tsayi, azaman madaidaicin indium-gallium-arsenide (InGaAs) tushen na'urorin opto-electronic.Indium Phosphide kuma yana cikin ƙirƙira don madaidaicin hanyoyin hasken haske a cikin hanyoyin sadarwa na fiber na gani, na'urorin tushen wutar lantarki, na'urorin lantarki na microwave da na'urorin FETs na ƙofar, na'urori masu saurin sauri da masu gano hoto, da tauraron dan adam kewayawa da sauransu.

Tambaya yanzu

Cikakkun bayanai

Tags

Ƙayyadaddun Fasaha

Indium Phosphide InP

Indium Phosphide Single CrystalWafer (InP crystal ingot ko Wafer) a Western Minmetals (SC) Corporation za a iya miƙa tare da p-type, n-type da Semi-insulating conductivity a cikin girman 2" 3" 4" da 6" (har zuwa 150mm) diamita, fuskantarwa <111> ko <100> da kauri 350-625um tare da saman gama na etched da goge ko Epi-shirye tsari.

Indium Phosphide Polycrystallineko Multi-Crystal ingot (InP poly ingot) a girman D(60-75) x L(180-400) mm na 2.5-6.0kg tare da maida hankali mai ƙasa da 6E15 ko 6E15-3E16 yana samuwa.Duk wani ƙayyadaddun ƙayyadaddun ƙayyadaddun da ake samu akan buƙata don cimma cikakkiyar mafita.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Indium Phosphide Single Crystal	2"	3"	4"
2	Diamita mm	50.8 ± 0.5	76.2 ± 0.5	100± 0.5
3	Hanyar Girma	VGF	VGF	VGF
4	Gudanarwa	P/Zn-doped, N/(S-doped ko un-doped), Semi-insulating
5	Gabatarwa	(100)±0.5°, (111)±0.5°
6	Kauri μm	350± 25	600± 25	600± 25
7	Gabatarwa Flat mm	16±2	22±1	32.5 ± 1
8	Gane Flat mm	8±1	11 ± 1	18± 1
9	Motsin motsi cm2/Vs	50-70,>2000, (1.5-4)E3
10	Matsakaicin Mai ɗaukar kaya cm-3	(0.6-6)E18, ≤3E16
11	TTV μm max	10	10	10
12	Baka μm max	10	10	10
13	μm max	15	15	15
14	Matsakaicin Dinsity cm-2 max	500	1000	2000
15	Ƙarshen Sama	P/E, P/P	P/E, P/P	P/E, P/P
16	Shiryawa	Kwanan wafer guda ɗaya an rufe shi a cikin jakar haɗin aluminum.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Indium Phosphide Ingot	Poly-Crystalline ko Multi-Crystal Ingot
2	Girman Crystal	D (60-75) x L (180-400) mm
3	Nauyi kowane Crystal Ingot	2.5-6.0Kg
4	Motsi	≥3500 cm²/VS
5	Tattaunawar Mai ɗaukar kaya	≤6E15, ko 6E15-3E16 cm^-3
6	Shiryawa	Kowane InP crystal ingot yana cikin jakar filastik da aka rufe, 2-3 ingots a cikin akwati guda ɗaya.

Tsarin layi na layi	InP
Nauyin Kwayoyin Halitta	145.79
Tsarin Crystal	Zinc blende
Bayyanar	Crystalline
Matsayin narkewa	1062°C
Wurin Tafasa	N/A
Yawan yawa a 300K	4.81 g/cm³
Tazarar Makamashi	1.344v
Intrinsic resistivity	8.6E7 Ω-cm
Lambar CAS	22398-80-7
Lambar EC	244-959-5

Indium Phosphide InP Waferana amfani dashi ko'ina don kera kayan haɗin optoelectronic, ƙarfin ƙarfi da na'urorin lantarki masu ƙarfi, azaman madaidaicin na'urar indium-gallium-arsenide (InGaAs) tushen na'urorin opto-electronic.Indium Phosphide kuma yana cikin ƙirƙira don madaidaicin hanyoyin hasken haske a cikin hanyoyin sadarwa na fiber na gani, na'urorin tushen wutar lantarki, na'urorin lantarki na microwave da na'urorin FETs na ƙofar, na'urori masu saurin sauri da masu gano hoto, da tauraron dan adam kewayawa da sauransu.