Gallium Nitride GaN

Bayani

Gallium Nitride GaN, CAS 25617-97-4, kwayoyin taro 83.73, wurtzite crystal tsarin, ne a binary fili kai tsaye band-rata semiconductor na rukuni III-V girma da sosai ɓullo da ammonothermal tsari Hanyar.Halaye da ingantacciyar ingancin crystalline, high thermal conductivity, high electron motsi, high m electric field and wide bandgap, Gallium Nitride GaN yana da kyawawan halaye a cikin optoelectronics da aikace-aikacen ji.

Aikace-aikace

Gallium Nitride GaN ya dace da samar da babban saurin yankan-baki da babban ƙarfin haske mai fitar da diodes LEDs abubuwan da aka gyara, Laser da na'urorin optoelectronics kamar lasers kore da shuɗi, samfuran motsi na motsi na lantarki (HEMTs) kuma cikin babban iko. da masana'antar kera na'urori masu zafin jiki.

Bayarwa

Gallium Nitride GaN a Western Minmetals (SC) Corporation za a iya bayar da girman wafer 2 inch "ko 4" (50mm, 100mm) da murabba'in wafer 10 × 10 ko 10 × 5 mm.Duk wani girman da aka keɓancewa da ƙayyadaddun bayanai sune don cikakkiyar mafita ga abokan cinikinmu a duk duniya.

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Ƙayyadaddun Fasaha

Gallium Nitride GaN

Gallium Nitride GaNa Western Minmetals (SC) Corporation za a iya bayar da a girman madauwari wafer 2 inch "ko 4" (50mm, 100mm) da square wafer 10 × 10 ko 10 × 5 mm.Duk wani girman da aka keɓancewa da ƙayyadaddun bayanai sune don cikakkiyar mafita ga abokan cinikinmu a duk duniya.

A'a.	Abubuwa	Daidaitaccen Bayani
1	Siffar	madauwari	madauwari	Dandalin
2	Girman	2"	4"	--
3	Diamita mm	50.8 ± 0.5	100± 0.5	--
4	Tsawon gefen mm	--	--	10x10 ko 10x5
5	Hanyar Girma	HVPE	HVPE	HVPE
6	Gabatarwa	C-jirgin sama (0001)	C-jirgin sama (0001)	C-jirgin sama (0001)
7	Nau'in Gudanarwa	N-type/Si-doped, Un-doped, Semi-insulating
8	Resistivity Ω-cm	<0.1, <0.05, >1E6
9	Kauri μm	350± 25	350± 25	350± 25
10	TTV μm max	15	15	15
11	Baka μm max	20	20	20
12	EPD cm-2	<5E8	<5E8	<5E8
13	Ƙarshen Sama	P/E, P/P	P/E, P/P	P/E, P/P
14	Tashin Lafiya	Gaba: ≤0.2nm, Baya: 0.5-1.5μm ko ≤0.2nm
15	Shiryawa	Kwanan wafer guda ɗaya an rufe a cikin jakar Aluminum.

Tsarin layi na layi	GaN
Nauyin Kwayoyin Halitta	83.73
Tsarin Crystal	Zinc blende/Wurtzite
Bayyanar	m
Matsayin narkewa	2500 °C
Wurin Tafasa	N/A
Yawan yawa a 300K	6.15 g/cm³
Tazarar Makamashi	(3.2-3.29) eV a 300K
Intrinsic resistivity	> 1E8 Ω-cm
Lambar CAS	25617-97-4
Lambar EC	247-129-0

Gallium Nitride GaNYa dace da samar da babban saurin yankan-baki da babban ƙarfin haske-emitting diodes abubuwan haɗin LEDs, Laser da na'urorin optoelectronics kamar lasers kore da shuɗi, samfuran motsi na motsi na lantarki (HEMTs) kuma a cikin babban ƙarfi da haɓaka. masana'antar kera na'urorin zafin jiki.