Gallium Arsenide GaAs

Bayani

Gallium ArsenideGa ni a kai tsaye band rata fili semiconductor na rukuni III-V hada da akalla 6N 7N high tsarki gallium da arsenic kashi, da kuma girma crystal ta VGF ko LEC tsari daga high tsarki polycrystalline gallium arsenide, launin toka bayyanar, cubic lu'ulu'u tare da zinc-blende tsarin.Tare da doping na carbon, silicon, tellurium ko zinc don samun nau'in n-type ko p-type da semi-insulating conductivity bi da bi, za a iya yanka crystal InAs cylindrical da ƙirƙira a cikin komai da wafer a matsayin-yanke, etched, goge ko epi. - shirye don MBE ko MOCVD girma epitaxial.Gallium Arsenide wafer ana amfani da shi musamman don ƙirƙira na'urorin lantarki kamar infrared haske-emitting diodes, Laser diodes, windows na gani, transistor FETs mai tasirin filin, madaidaiciyar ICs na dijital da ƙwayoyin rana.Abubuwan GaAs suna da amfani a cikin mitocin rediyo masu girma da sauri da aikace-aikacen sauya wutar lantarki, aikace-aikacen ƙararrawar sigina.Bugu da ƙari, Gallium Arsenide substrate abu ne mai mahimmanci don kera abubuwan RF, mitar microwave da monolithic ICs, da na'urorin LEDs a cikin hanyoyin sadarwa na gani da tsarin sarrafawa don yanayin motsin zauren, babban iko da kwanciyar hankali.

Bayarwa

Gallium Arsenide GaAs a Western Minmetals (SC) Corporation za a iya ba da shi azaman dunƙule polycrystalline ko wafer kristal guda ɗaya a cikin abin da aka yanke, etched, goge, ko shirye-shiryen wafer a cikin girman 2” 3” 4” da 6” (50mm, 75mm, 100mm, 150mm) diamita, tare da p-type, n-type ko Semi-insulating conductivity, da <111> ko <100> fuskantarwa.Ƙimar ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun ƙayyadaddun shine don cikakkiyar bayani ga abokan cinikinmu a duk duniya.