Bayani
FZ-NTD Silicon Wafer, wanda aka fi sani da Tafiya-Zone Neutron Transmutation Doped Silicon Wafer.Ba tare da iskar oxygen ba, babban tsabta da siliki mafi girman tsayayyar za a iya samun by Yankin Float FZ (Yankin-Shaye-shaye) haɓakar lu'ulu'u, High resistivity FZ silicon crystal ne sau da yawa doped ta Neutron Transmutation Doping (NTD) tsari, a cikin abin da neutron irradiation a kan unndoped float zone silicon don yin silicon isotopes tarko da neutrons sa'an nan kuma rube a cikin dopants da ake so don cimma burin doping.Ta hanyar daidaita matakin neutron radiation, ana iya canza juriya ba tare da gabatar da dopants na waje ba don haka tabbatar da tsabtar kayan abu.FZ NTD silicon wafers (Flat Zone Neutron Transmutation Doping Silicon) suna da kyawawan kaddarorin fasaha na haɓakar doping iri ɗaya da rarraba juzu'i na radial, matakan ƙazanta mafi ƙasƙanci,da manyan 'yan tsiraru masu ɗaukar nauyi tsawon rayuwa.
Bayarwa
A matsayin babban mai siyar da siliki na NTD don aikace-aikacen wutar lantarki, da kuma bin buƙatun girma na wafers, mafi girman FZ NTD silicon wafer.a Western Minmetals (SC) Corporation za a iya miƙa wa abokan cinikinmu a duk duniya a cikin girman daban-daban daga 2 ″, 3″, 4″, 5″ da 6″ diamita (50mm, 75mm, 100mm, 125mm da 150mm) da fadi da kewayon resistivity 5 zuwa 2000 ohm.cm a cikin <1-1-1>, <1-1-0>, <1-0-0> daidaitawa tare da yanke, lapped, etched da goge saman gama a cikin fakitin akwatin kumfa ko kaset , ko kamar yadda aka keɓance ƙayyadaddun bayanai zuwa cikakkiyar bayani.
Ƙayyadaddun Fasaha
A matsayin babban mai ba da kasuwa na FZ NTD silicon don aikace-aikacen wutar lantarki mai ban sha'awa, da kuma bin buƙatun girma na wafers, mafi girman FZ NTD silicon wafer a Western Minmetals (SC) Corporation ana iya ba abokan cinikinmu a duk duniya a cikin girman daban-daban daga 2. "zuwa 6" a diamita (50, 75, 100, 125 da 150mm) da fadi da kewayon resistivity 5 zuwa 2000 ohm-cm a <1-1-1>, <1-1-0>, <1-0- 0> fuskantarwa tare da lapped, etched da goge saman gama a cikin kunshin akwatin kumfa ko kaset, akwatin kwali a waje ko azaman takamaiman takamaiman bayani.
A'a. | Abubuwa | Daidaitaccen Bayani | ||||
1 | Girman | 2" | 3" | 4" | 5" | 6" |
2 | Diamita | 50.8 ± 0.3 | 76.2 ± 0.3 | 100± 0.5 | 125± 0.5 | 150± 0.5 |
3 | Gudanarwa | n-iri | n-iri | n-iri | n-iri | n-iri |
4 | Gabatarwa | <100>, <111>, <110> | ||||
5 | Kauri μm | 279, 381, 425, 525, 575, 625, 675, 725 ko kuma yadda ake bukata | ||||
6 | Resistivity Ω-cm | 36-44, 44-52, 90-110, 100-250, 200-400 ko kamar yadda ake bukata | ||||
7 | Farashin RRV | 8%, 10%, 12% | ||||
8 | TTV μm max | 10 | 10 | 10 | 10 | 10 |
9 | Bow/Warp μm max | 30 | 30 | 30 | 30 | 30 |
10 | Carrier Lifetime μs | > 200, > 300, > 400 ko yadda ake bukata | ||||
11 | Ƙarshen Sama | Kamar yadda aka yanke, Lapped, goge | ||||
12 | Shiryawa | Akwatin kumfa a ciki, akwatin kwali a waje. |
Asalin Material Siga
Alama | Si |
Lambar Atom | 14 |
Nauyin Atom | 28.09 |
Kashi na Element | Metalloid |
Rukuni, Lokaci, Toshe | 14, 3, P |
Tsarin Crystal | Diamond |
Launi | Dark launin toka |
Matsayin narkewa | 1414°C, 1687.15 K |
Wurin Tafasa | 3265°C, 3538.15 K |
Yawan yawa a 300K | 2.329 g/cm3 |
Intrinsic resistivity | 3.2E5 Ω-cm |
Lambar CAS | 7440-21-3 |
Lambar EC | 231-130-8 |
FZ-NTD Silicon Wafermuhimmin mahimmanci ne ga aikace-aikace a cikin babban iko, fasahar ganowa da kuma a cikin na'urorin semiconductor waɗanda dole ne suyi aiki a cikin matsanancin yanayi ko kuma ana buƙatar ƙarancin ƙarancin juriya a cikin wafer, kamar ƙofa-kashe thyristor GTO, static induction thyristor SITH, giant transistor GTR, insulate-gate bipolar transistor IGBT, ƙarin HV diode PIN.FZ NTD n-nau'in silicon wafer shima azaman babban kayan aiki ne don masu canza mitar mitoci daban-daban, masu gyara, manyan abubuwan sarrafa iko, sabbin na'urorin lantarki, na'urorin lantarki, na'urar gyara silicon SR, SCR sarrafa silicon, da abubuwan gani kamar ruwan tabarau da windows. don aikace-aikacen terahertz.
Tukwici na Kasuwanci
FZ NTD Silicon Wafer