Imec, cibiyar bincike da ƙididdigewa ta Belgian, ta gabatar da na'urorin heterojunction bipolar transistor (HBT) na GaAs na farko akan 300mm Si, da na'urorin GaN masu dacewa da CMOS akan 200mm Si don aikace-aikacen mm-wave.
Sakamakon yana nuna yuwuwar duka III-V-on-Si da GaN-on-Si azaman fasahar da ta dace ta CMOS don ba da damar ƙirar gaba-gaba na RF don wuce aikace-aikacen 5G.An gabatar da su a taron IEDM na bara (Disamba 2019, San Francisco) kuma za a nuna su a cikin gabatar da mahimman bayanai na Imec's Michael Peeters game da sadarwar mabukaci fiye da broadband a IEEE CCNC (10-13 Jan 2020, Las Vegas).
A cikin sadarwa mara waya, tare da 5G a matsayin ƙarni na gaba, ana samun turawa zuwa mafi girman mitoci masu aiki, suna motsawa daga cunkoson maƙallan ƙananan 6GHz zuwa igiyoyin igiyoyin mm-wave (da kuma bayan).Gabatar da waɗannan makada masu raƙuman ruwa na mm yana da tasiri mai mahimmanci akan tsarin cibiyar sadarwar 5G gabaɗaya da na'urorin hannu.Don sabis na wayar hannu da Kafaffen Wireless Access (FWA), wannan yana fassara zuwa ƙarin hadaddun tsarin gaba-gaba waɗanda ke aika siginar zuwa ko daga eriya.
Don samun damar yin aiki a mitoci-mm-wave, samfuran gaban-ƙarshen RF dole ne su haɗa babban saurin (ba da damar ƙimar bayanai na 10Gbps da ƙari) tare da babban fitarwa.Bugu da ƙari, aiwatar da su a cikin wayoyin hannu yana sanya buƙatu masu yawa akan nau'ikan nau'ikan su da ingancin wutar lantarki.Bayan 5G, waɗannan buƙatun ba za a iya cim ma su ba tare da mafi girman ci gaba na RF na gaba-gaba na yau da kullun waɗanda galibi suka dogara da fasahohi iri-iri iri-iri da sauransu na tushen HBT na GaAs don masu haɓaka wutar lantarki - waɗanda aka girma akan ƙananan kayan GaAs masu tsada.
"Don ba da damar na gaba-gaba na RF gaban-ƙarshen kayayyaki fiye da 5G, Imec ya bincika fasahar CMOS-daidaitacce III-V-on-Si", in ji Nadine Collaert, darektan shirin a Imec."Imec yana duban haɗin kai na abubuwan gaba-gaba (kamar amplifiers da masu sauyawa) tare da sauran hanyoyin da'irori na CMOS (kamar ikon sarrafawa ko fasahar transceiver), don rage farashi da nau'in nau'i, da ba da damar sabbin hanyoyin da'ira. don magance aiki da inganci.Imec yana binciko hanyoyi daban-daban guda biyu: (1) InP akan Si, niyya mm-kalaman da mitoci sama da 100GHz (aiki na 6G na gaba) da (2) na'urorin tushen GaN akan Si, niyya (a cikin farkon lokaci) ƙananan igiyoyin mm makada da kuma magance aikace-aikacen da ke buƙatar babban ƙarfin ƙarfi.Ga hanyoyin biyu, yanzu mun sami na'urori masu aiki na farko tare da kyawawan halaye masu ban sha'awa, kuma mun gano hanyoyin da za mu ƙara haɓaka mitocin su."
Na'urorin GaAs/InGaP HBT masu aiki waɗanda aka girma akan 300mm Si an nuna su azaman matakin farko zuwa kunna na'urorin tushen InP.Tarin na'ura mara lahani mai ƙasa da 3x106cm-2 threading dislocation density an samo shi ta amfani da tsarin injiniya na musamman na Imec na III-V nano-ridge (NRE).Na'urorin suna yin aiki da kyau fiye da na'urorin bincike, tare da ƙera GaAs akan Si substrates tare da yadudduka masu sassaucin ra'ayi (SRB).A mataki na gaba, za a bincika na'urorin tushen InP masu girma (HBT da HEMT).
Hoton da ke sama yana nuna tsarin NRE don haɗin kai na III-V/CMOS akan 300mm Si: (a) nano-trench formation;lahani suna kama a cikin kunkuntar yanki na mahara;(b) Haɓaka tari na HBT ta amfani da NRE da (c) zaɓuɓɓukan shimfidawa daban-daban don haɗa na'urar HBT.
Bugu da ƙari, na'urorin GaN/AlGaN masu dacewa da CMOS akan 200mm Si an ƙirƙira su tare da kwatanta gine-ginen na'urori daban-daban guda uku - HEMTs, MOSFETs da MISHEMTs.An nuna cewa na'urorin MISHEMT sun zarce sauran nau'ikan na'urori dangane da girman na'urar da aikin amo don aiki mai girma.Matsakaicin yanke-ƙasa na fT/fmax a kusa da 50/40 an samu don tsayin ƙofar 300nm, wanda ya yi daidai da na'urorin GaN-on-SiC da aka ruwaito.Bayan ƙarin sikelin tsayin ƙofa, sakamakon farko tare da AlInN a matsayin kayan katanga yana nuna yuwuwar ƙara haɓaka aikin, sabili da haka, ƙara mitar aiki na na'urar zuwa maƙallan mm-kalaman da ake buƙata.
Lokacin aikawa: 23-03-21